Fully depleted devices for designers: FDSOI and FinFETs
Fully depleted devices for designers: FDSOI and FinFETs
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供设计人员使用的全耗尽型器件：FDSOI 和 FinFET
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
T. Hook
中科院分区：
文献类型：
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作者：
T. Hook
具有全耗尽晶体管的技术正在进入28 nm、20 nm和14 nm节点设计的主流。虽然这些器件已经成为器件工程师的游乐场十多年了，但它们大部分只是最近才被介绍给电路设计师和逻辑芯片集成商。晶体管的物理结构和许多特性（或缺乏特性）维斯传统平面器件不同，打开了一些新的大门，也可能关闭了一些旧的大门。在本文中，我们讨论了平面（不同称为ETSOI/UTBB/FDSOI 1）和三维（不同称为FinFET或三栅或双栅）完全耗尽型器件，比较和对比它们彼此之间，并与经典的设备，并在体和SOI的表现。
Technologies featuring fully depleted transistors are entering the mainstream for designs at the 28nm, 20nm, and 14nm nodes. Although these devices have been the playground of device engineers for more than a decade it is for the most part only recently that they have been introduced to circuit designers and logic chip integrators. The physical structure and many of the features - or lack thereof - of the transistors vis-à-vis conventional planar devices are different, opening some new doors and perhaps closing some old ones. In this paper we discuss both planar (variously called ETSOI/UTBB/FDSOI1) and three-dimensional (variously called FinFET or trigate or doublegate) fully depleted devices, comparing and contrasting them with one another and with classical devices, and in both bulk and SOI manifestations.