Enhancement of LED light extraction via diffraction of hexagonal lattice fabricated in ITO layer with holographic lithography and wet etching
Enhancement of LED light extraction via diffraction of hexagonal lattice fabricated in ITO layer with holographic lithography and wet etching
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DOI：
10.1016/j.physleta.2008.02.014
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发表时间：
2008-05
影响因子：
2.6
通讯作者：
Xiangsu Zhang;Shou Liu;Y. Liu;Xiaoyun Chen;Han Lin;X. Ren
中科院分区：
文献类型：
--
作者：
Xiangsu Zhang;Shou Liu;Y. Liu;Xiaoyun Chen;Han Lin;X. Ren
提出了一种利用ITO薄膜中的晶格衍射来提高LED光提取效率的新方法。晶格的制作过程包括全息光刻和湿法刻蚀。3-采用光束干涉全息法制作了可覆盖2英寸半导体晶片的大面积六角点阵掩模，并利用酸腐蚀将其转移到p接触ITO层上。1.4在初步实验中，从GaN基LED获得了在20 mA注入电流下光输出的倍数增强。晶格制造过程是快速和具有成本效益的，因此能够实现高亮度LED的工业化大规模生产。
A novel method for enhancing light extraction efficiency of LEDs via diffraction of the lattice fabricated in ITO layers of LEDs is proposed. The lattice fabrication process includes holographic lithography and wet etching. 3-beam interference holographic approach was used to fabricate large-area hexagonal lattice mask which can cover 2-inch semiconductor wafer, and acid etching was used to transfer the lattice structure into p-contact ITO layer. 1.4 fold enhancement of light output at 20 mA injection current was obtained from GaN-based LEDs in the primary experiment. The lattice fabrication process is rapid and cost-effective thus enabling industrial mass production of high brightness LEDs.