Si-Substituted Ultrathin Ferroelectric Films
Si-Substituted Ultrathin Ferroelectric Films
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DOI：
10.1143/jjap.41.l716
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发表时间：
2002-06
影响因子：
1.5
通讯作者：
T. Kijima;H. Ishiwara
中科院分区：
文献类型：
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作者：
T. Kijima;H. Ishiwara
采用溶胶-凝胶旋涂法制备了Bi 2SiO 5与传统铁电材料Bi 4 Ti 3 O 12、SrBi 2 Ta 2 O 9和Pb（Zr，Ti）O3之间的固溶体。结果表明，铁电薄膜的晶化温度比原始铁电薄膜的晶化温度低150 ~ 200°C，薄膜表面变得非常平整光滑。由于这些优异的性能，成功地制造了13- 25 nm厚的铁电电容器，其中极化在0.5 V的施加电压下达到饱和。还讨论了薄膜的形成机理。
Solid solutions between Bi2SiO5 and conventional ferroelectric materials such as Bi4Ti3O12, SrBi2Ta2O9 and Pb(Zr,Ti)O3 were formed using a sol-gel spin-coating method. It was found that the crystallization temperatures of the films were lower by 150 to 200°C than those of the original ferroelectric films and that the surface of the films became very flat and smooth. Because of these excellent properties, ultrathin (13- to 25-nm-thick) ferroelectric capacitors were successfully fabricated, in which the polarization was well saturated at an applied voltage of 0.5 V. Discussion on the formation mechanism of the films is also presented.