Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz
Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz
复制标题
fT>500GHz的成分梯度基极II型InP∕GaAsSb双异质结双极晶体管的性能增强
DOI：
10.1063/1.2207843
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Feng
中科院分区：
文献类型：
--
作者：
W. Snodgrass;Bing;W. Hafez;K. Cheng;M. Feng
本文研究了具有均匀渐变的25nm基区和65nm InP集电极的Ⅱ型InP闪烁GaAsSb双异质结双极晶体管（DHBTs）的高频特性。在电流密度接近15mA scinum2时，梯度基极DHBT的峰值电流增益为20.5，而均匀基极DHBT的峰值电流增益为14.9。发射极尺寸为0.38×8μm2的渐变基极器件的峰值fT从25°C时的505GHz提高到−55°C时的535GHz，这是通过−20dB scindecade外推法确定的。与统一的II型DHBT基础相比，基础分级减少了25%的总运输时间。
The high frequency performance of type-II InP∕GaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25nm base layers and 65nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15mA∕μm2. The peak fT of a graded base device with 0.38×8μm2 emitter dimensions improves from 505GHz at 25°C to 535GHz at −55°C as determined by −20dB∕decade extrapolation. The base grading has reduced the total transit time by 25% compared to the uniform base type-II DHBT.