Simulation of electron beam exposure of submicron patterns
Simulation of electron beam exposure of submicron patterns
复制标题
亚微米图案的电子束曝光模拟
DOI：
10.1116/1.584529
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发表时间：
1989
影响因子：
1.4
通讯作者：
N. MacDonald
中科院分区：
文献类型：
--
作者：
J. McMillan;Sylvester Johnson;N. MacDonald
比较了解析和蒙特卡罗电子束径向曝光分布(RED)在预测亚微米光刻图形邻近效应方面的准确性。开发了一个邻近效应模拟工具(PRESTO)，用于将所需的图案与电子能量损失(SEEL)模拟的配套蒙特卡罗程序所获得的RED或与实验结果相符合的经验RED进行卷积。SEEL和PRESTO一起使用聚焦高斯电子束系统模拟了亚微米尺寸图案的电子束曝光。Presto通过模拟每个像素的抗蚀剂曝光来生成图案的电子分布。一旦确定了能量分布，就可以绘制给定形状曝光的等能量密度等值线。演示了PRESTO和SEEL对0.25μm设计规则的图形曝光的精确模拟能力。并将模拟结果与传统的模拟结果进行了比较。
Analytical and Monte Carlo electron beam radial exposure distributions (REDs) are compared for accuracy in predicting proximity effects in submicron lithographic patterns. A proximity effect simulation tool (PRESTO) has been developed to convolve the desired pattern with the RED obtained from a companion Monte Carlo program for the simulation of electron energy loss (SEEL) or an empirical RED which is an analytical fit to experimental results. Together, SEEL and PRESTO are shown to simulate the electron beam exposure of submicron size patterns using a focused Gaussian electron beam system. PRESTO generates the electron distribution for the pattern by simulating the exposure of the resist for each pixel. Once the energy distribution has been determined equienergy density contours for the exposure of a given shape can be plotted. The ability of PRESTO and SEEL to accurately simulate the exposure of patterns with 0.25 μm design rules is demonstrated. Comparisons are made of the simulation results obtained wh...