Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes
Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes
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DOI：
10.1063/1.1823590
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发表时间：
2004-11-22
影响因子：
4
通讯作者：
Salamo, GJ
中科院分区：
文献类型：
--
作者：
Wang, ZM;Seydmohamadi, S;Salamo, GJ
利用分子束外延技术制备了多层量子点，研究了（In，Ga）As量子点在GaAs基体中的自组织表面有序性。虽然一维链状有序是在奇异和轻微取向错误的GaAs（100）表面上形成的，但我们报道了出现在GaAs（n11）B（其中n为7，5，4和3）上的二维方形有序。使用一种技术来控制表面扩散，发现不同的有序模式是由各向异性表面扩散和各向异性弹性基质之间的竞争引起的，这是所罗门[Appl.Phys.Lett. 84，2073（2004）]。(C)2004年，美国物理学会。
Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)]. (C) 2004 American Institute of Physics.