Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
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DOI：
10.1016/j.sna.2013.02.017
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发表时间：
2013-05-01
影响因子：
4.6
通讯作者：
Allsopp, D. W. E.
中科院分区：
文献类型：
--
作者：
Le Boulbar, E. D.;Edwards, M. J.;Allsopp, D. W. E.
这项工作报告的偏置和压力敏感性的AlGaN/GaN高电子迁移率晶体管（HEMT）的敏感元件战略性地放置在一个压力敏感的隔膜夹在其边缘。灵敏度在HEMT的弱反型区中比在强反型区中大150倍以上，导致当施加50巴的压力时漏极电流变化>38%。HEMT对压力的敏感性遵循从大气压到80巴的指数依赖性，通过二维电子气的密度对在弱反型区中的HEMT阈值电压中的压力引起的变化的响应来解释该行为。最后，发现HEMT的灵敏度在其位于隔膜中间时最大，而安装在箝位点上方的器件在施加50巴的压力变化时显示漏极电流的变化小于0.02%。(C)2013爱思唯尔有限公司版权所有。
This work reports the bias and pressure sensitivity of AlGaN/GaN High Electron Mobility Transistors (HEMTs) sensing elements strategically placed on a pressure sensitive diaphragm clamped at its edges. The sensitivity was over 150 times greater in the weak inversion regime than in the strong inversion regime of the HEMT, leading to a drain current change of >38% when a pressure of 50 bar was applied. The sensitivity of the HEMT to pressure followed an exponential dependence from atmospheric pressure up to 80 bar, behaviour explained by the response of the density of a two-dimensional electron gas to pressure induced changes in the HEMT threshold voltage in the weak inversion regime. Finally, it was found that the sensitivity of the HEMT was maximum when it was situated in the middle of the diaphragm, whereas a device mounted over the clamping point showed less than 0.02% change in drain current when pressure change of 50 bar was applied. (C) 2013 Elsevier B.V. All rights reserved.