THz interconnect for inter-/intra-chip communication
THz interconnect for inter-/intra-chip communication
复制标题
用于芯片间/芯片内通信的太赫兹互连
DOI：
10.1117/12.2518567
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Zhiwei Xu
中科院分区：
文献类型：
--
作者：
Q. Gu;Bo Yu;Xuan Ding;Y. Ye;X. Liu;Zhiwei Xu
“互连差距”是由芯片间/芯片内通信不断增长的数据速率需求与能力不足之间的差距引起的，十多年来引起了电子和光学领域的积极研究，即所谓的电互连（EI）和光互连（OI）。然而，由于 EI 和 OI 固有的挑战，它们很难单独完全解决互连问题。太赫兹互连 (TI) 利用微波和光学频率之间的频谱，通过利用电子和光学的优势，具有补充 EI 和 OI 的巨大潜力。主流硅技术的不断扩展使得硅中的太赫兹电子成为可能。另一方面，太赫兹介电波导与相应的光纤相似，尺寸小，并且在太赫兹频率下损耗低。本文将介绍高潜力 TI 领域的研究活动，包括高效太赫兹信号生成和调制电路、低损耗和宽带宽太赫兹硅波导通道以及正交模式支持，以及用于芯片间通信的太赫兹互连的系统演示。
“Interconnect Gap”, caused by the gap between the ever-increasing data rate demand of inter-/intra- chip communications and the insufficient capabilities, has intrigued active research over a decade from both electronics and optics domains, so called electrical interconnect (EI) and optical interconnect (OI). However, it is challenging for both EI and OI to completely address the interconnect issues individually due to their inherent challenges. THz Interconnect (TI), utilizing the frequency spectrum sandwiched between microwave and optical frequencies, holds the high potentials to complement EI and OI by leveraging the advantages of both electronics and optics. Continuous scaling of mainstream silicon technologies enables THz electronics in silicon. On the other hand, THz dielectric waveguides, similar to their optical counterpart fiber, have small dimensions and present low loss at THz frequencies. This paper will present the research activities in the high potential TI field, including high efficiency THz signal generation and modulation circuits, low loss and wide bandwidth THz silicon waveguide channels together with ortho-mode support, and system demonstration of the THz Interconnect for chip to chip communications.