Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
复制标题
各向异性原子薄二硒化铼的层间相互作用
DOI:
10.1007/s12274-015-0865-0
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发表时间:
2015
期刊:
影响因子:
9.9
通讯作者:
Han Wang
中科院分区:
文献类型:
--
作者:
Huan Zhao;Jiangbin Wu;Hongxia Zhong;Qiushi Guo;Xiaomu Wang;Fengnian Xia;Li Yang;Ping-Heng Tan;Han Wang
In this work, we study the interlayer phonon vibration modes, the layer-numberdependent optical bandgap, and the anisotropic photoluminescence (PL) spectra of atomically thin rhenium diselenide (ReSe2) for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal’s interaction and two-dimensional (2D) quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing.