SPICE Model of Memristive Devices with Threshold
SPICE Model of Memristive Devices with Threshold
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发表时间：
2012-04
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通讯作者：
Y. Pershin;M. Ventra
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作者：
Y. Pershin;M. Ventra
摘要：尽管具有阈值电压的忆阻器件在实验可实现的系统中是常态而不是例外，但它们的 SPICE 编程尚不常见。在这里，我们展示如何在 SPICE 环境中实现此类系统。具体来说，我们提出了一种流行的压控忆阻系统的 SPICE 模型，该模型由 PSPICE 和 NGSPICE 电路模拟器的五个不同参数指定。我们期望这种实现能够在电路设计和测试中得到广泛应用。索引术语——忆阻器、忆阻器、忆阻器模型、阈值动态。一、引言 在过去的几年里，具有记忆功能的电路元件，即忆阻[1]、忆电容和忆感[2]系统，由于它们能够在同一物理平台上存储和操作信息[3]，而引起了不同学科的广泛关注。然而，当组合成复杂的电路时，该领域的进展在很大程度上依赖于我们可用的工具。 SPICE 仿真环境就是此类工具之一，常用于电路仿真和测试。虽然忆阻 [4]、[5]、[6]、[7]、[8]、[9]、[10]、忆电容 [6] 和忆感 [6] 元件的几种 SPICE 模型已经可用，但它们通常 [4]、[5]、[6]、[7]、[8] 依赖于没有阈值的物理模型（例如参见参考文献 [11]、[12]）。相反，它是忆阻器件极其重要的共同特征（例如，请参阅参考文献[3]），并且由于物理限制，它也可能在记忆电容和记忆元件中很常见。事实上，阈值型开关负责非易失性信息存储，是逻辑运算的基础[13]、[14]等，因此不可忽视。在本文中，我们介绍了作者提出的具有阈值电压的忆阻器件的SPICE模型[15]。使用这种类型的忆阻设备，我们已经演示并分析了几种电子电路，包括学习电路[15]、忆阻神经网络[16]、逻辑电路[14]、模拟电路[17]以及将忆阻响应转换为忆电容和忆感响应的电路[18]。因此，这些先前的结果证明了所选物理模型的适用范围。因此，我们预计其 SPICE 实现也能找到大量应用。
Abstract—Although memristive devices with threshold voltagesare the norm rather than the exception in experimentallyrealizable systems, their SPICE programming is not yet common.Here, we show how to implement such systems in the SPICEenvironment. Specifically, we present SPICE models of a popularvoltage-controlled memristive system specified by five differentparameters for PSPICE and NGSPICE circuit simulators. Weexpect this implementation to find widespread use in circuitsdesign and testing.Index Terms—Memristive devices, memristor, memristormodel, threshold dynamics. I. I NTRODUCTION I N the last few years, circuit elements with memory,namely, memristive [1], memcapacitive and meminductive[2] systems have attracted considerable attention from differentdisciplines due to their capability to store and manipulateinformation on the same physical platform [3]. However, whencombined into complex circuits, progress in this field signifi-cantly relies on the available tools at our disposal. One suchtool is the SPICE simulation environment, commonly used incircuit simulations and testing. While several SPICE modelsof memristive [4], [5], [6], [7], [8], [9], [10], memcapacitive[6] and meminductive [6] elements are already available, theytypically [4], [5], [6], [7], [8] rely on physical models withouta threshold (see, e.g., Refs. [11], [12]).Threshold-type switching is instead an extremely importantcommon feature of memristive devices (for examples, see Ref.[3]) and, due to physical constraints, likely to be common inmemcapacitive and meminductive elements as well. Indeed, itis the threshold-type switching which is responsible for non-volatile information storage, serves as a basis for logic oper-ations [13], [14], etc., and therefore, it can not be neglected.In the present paper we introduce a SPICE model fora memristive device with threshold voltage that has beenproposed by the present authors [15]. Using this type of mem-ristive devices, we have already demonstrated and analyzedseveral electronic circuits including a learning circuit [15],memristive neural networks [16], logic circuits [14], analogcircuits [17] and circuits transforming memristive responseinto memcapacitive and meminductive ones [18]. These pre-vious results thus demonstrate the range of applicability ofthe selected physical model. As a consequence, we expect itsSPICE implementation to find numerous applications as well.