Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor
Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor
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DOI：
10.1063/1.4907894
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发表时间：
2015-02-02
影响因子：
4
通讯作者：
Oda, Shunri
中科院分区：
文献类型：
--
作者：
Horibe, Kosuke;Kodera, Tetsuo;Oda, Shunri
在基于电子自旋的量子比特体系结构中，量子比特读出中的反作用是一个需要大量关注的领域。我们在这里报告的反作用测量在硅器件与量子点和单电子晶体管（SET）的电荷传感器。我们观察到量子点中电子从基态到激发态的反作用诱导激发。我们的测量和理论拟合的数据揭示了条件下，合适的SET电荷传感器的量子位读出灵敏度和低反作用诱导的跃迁速率（小于1 kHz）可以实现。(C)2015 AIP Publishing LLC.
Back-action in the readout of quantum bits is an area that requires a great deal of attention in electron spin based-quantum bit architecture. We report here back-action measurements in a silicon device with quantum dots and a single-electron transistor (SET) charge sensor. We observe the back-action-induced excitation of electrons from the ground state to an excited state in a quantum dot. Our measurements and theoretical fitting to the data reveal conditions under which both suitable SET charge sensor sensitivity for qubit readout and low back-action-induced transition rates (less than 1 kHz) can be achieved. (C) 2015 AIP Publishing LLC.