Degradation of non-linear optocouplers induced by 60 MeV proton irradiation
Degradation of non-linear optocouplers induced by 60 MeV proton irradiation
复制标题
60 MeV 质子辐照引起的非线性光耦合器的退化
DOI：
10.1016/j.nima.2019.162383
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Dong Guantao
中科院分区：
文献类型：
--
作者：
Xu Rui;Wang Zujun;Ning Hao;Xue Yuanyuan;Liu Minbo;Ma Wuying;Yao Zhibin;Dong Guantao
In this paper, the experiments of proton irradiation on optocoupler are presented. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. The degradations of primary photocurrent are analyzed, which may be attributed to the photoresponse degradation in collector-base junction of phototransistor. The parameter degradations of light-emitting diode (LED) after irradiation play a role too. The degradations of transistor gain change the dependence of CTR on forward current. Finally, integration research from the irradiation-sensitive parameter degradation to the CTR degradation of the optocoupler is achieved.
