A simple high-sensitivity technique for purity analysis of xenon gas
A simple high-sensitivity technique for purity analysis of xenon gas
复制标题
一种简单的高灵敏度氙气纯度分析技术
DOI：
10.1016/j.nima.2010.04.152
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发表时间：
2010
影响因子：
1.4
通讯作者：
Y. Yen
中科院分区：
文献类型：
--
作者：
D. Leonard;D. S. Leonard;A. Dobi;C. Hall;L. Kaufman;T. Langford;S. Slutsky;Y. Yen
我们报告的发展和性能的高灵敏度纯度分析技术的气态氙。使用UHV泄漏阀在宏观压力下从感兴趣的系统中对气体进行采样。用液氮冷阱除去样品中存在的氙，用标准真空质谱仪观察剩余的杂质。使用已知杂质水平的氙气校准样品，我们发现N2，O2和甲烷的最小可检测水平分别为1×10−9，160×10−12和60 ×10− 12 g/g。这表示与在没有冷阱的情况下进行的测量相比改进了约10000倍。
We report on the development and performance of a high-sensitivity purity-analysis technique for gaseous xenon. The gas is sampled at macroscopic pressure from the system of interest using a UHV leak valve. The xenon present in the sample is removed with a liquid-nitrogen cold trap, and the remaining impurities are observed with a standard vacuum mass-spectroscopy device. Using calibrated samples of xenon gas spiked with known levels of impurities, we find that the minimum detectable levels of N2, O2, and methane are 1×10−9, 160×10−12, and 60 ×10−12g/g, respectively. This represents an improvement of about a factor of 10000 compared to measurements performed without a cold trap.