High-resistivity metal-oxide films through an interlayer of graphene grown directly on copper electrodes.
High-resistivity metal-oxide films through an interlayer of graphene grown directly on copper electrodes.
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通过直接在铜电极上生长的石墨烯夹层形成高电阻率金属氧化物薄膜。
DOI：
10.1007/s41127-017-0016-3
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Pfaendler SM
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文献类型：
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作者：
Pfaendler SM
功能氧化物是柔性和透明电子产品中多种应用的重要材料。电接触这些氧化物以形成活性通道通常具有挑战性，因为它们在与金属电极接合时遭受显著的改变或不稳定性。在这里，我们展示了一种新的方案，电接触薄膜的半导体锌锡氧化物（ZnSnO），采用预图案化的铜电极封装的化学气相沉积石墨烯。对具有不同几何形状和接触性质的超过100个通道的测量表明，具有石墨烯/Cu复合材料的ZnSnO通道的体电阻率比直接沉积在铝（Al）接触上的相同膜大至少两个数量级。此外，ZnSnO通道与铜/石墨烯接触显示出近欧姆传输，在其他接触方案观察到的空间电荷限制的导电相反。我们的研究结果概述了石墨烯的一个新的应用，朝着氧化物电子学的替代接触策略的发展迈出了一步。
Functional oxides are important materials for multiple applications in flexible and transparent electronics. Electrically contacting these oxides to form active channels is often challenging as they suffer significant alteration or instabilities when interfaced with metal electrodes. Here, we demonstrate a new scheme to electrically contact thin films of semiconducting zinc tin oxide (ZnSnO) that employs pre-patterned copper electrodes encapsulated by chemical-vapour-deposited graphene. Measurement of over more than 100 channels with varying geometry and nature of contact shows that the bulk resistivity of the ZnSnO channels with graphene/Cu composite is at least two orders of magnitude larger than the same films deposited directly on aluminium (Al) contacts. Moreover, the ZnSnO channels with Cu/graphene contacts showed nearly ohmic transport, in contrast to space-charge-limited conduction observed for other contacting schemes. Our results outline a new application of graphene in a step towards the development of alternative contacting strategies for oxide electronics.