Impact ionization coefficients of 4H silicon carbide
Impact ionization coefficients of 4H silicon carbide
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DOI：
10.1063/1.1784520
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发表时间：
2004-08-23
影响因子：
4
通讯作者：
Sano, N
中科院分区：
文献类型：
--
作者：
Hatakeyama, T;Watanabe, T;Sano, N
利用p（+）n二极管在（0001）和（11（2）over bar 0）4 H碳化硅外延片上的雪崩击穿行为，研究了4 H碳化硅碰撞电离系数的各向异性。碰撞电离系数提取的雪崩击穿电压和反向漏电流的乘法，由于这些p（+）n二极管的碰撞电离。p（+）n二极管在（11（2）over bar 0）晶片上的击穿电压是在（0001）晶片上的60%，提取的4 H碳化硅的碰撞电离系数表现出较大的各向异性。我们已经表明，碰撞电离系数的各向异性有关的载流子加热和漂移速度的各向异性，这是由于高度各向异性的电子结构的4 H碳化硅。(C)2004年，美国物理学会。
Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p(+)n diodes on (0001) and (11(2) over bar0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to impact ionization of these p(+)n diodes. The breakdown voltage of a p(+)n diode on a (11(2) over bar0) wafer is 60% of that on a (0001) wafer, and the extracted impact ionization coefficients of 4H silicon carbide show large anisotropy. We have shown that the anisotropy of the impact ionization coefficients is related to the anisotropy of carrier heating and drift velocity, which are due to the highly anisotropic electronic structure of 4H silicon carbide. (C) 2004 American Institute of Physics.