Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering
Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering
复制标题
使用非接触模式扫描近场光学拉曼显微镜表征 Si 纳米结构，空间分辨率为 100 nm，深度分辨率为 5 nm，采用紫外共振拉曼散射
DOI：
10.1063/1.2780114
复制
发表时间：
2007
影响因子：
4
通讯作者：
H. Ishida
中科院分区：
文献类型：
--
作者：
M. Yoshikawa;M. Murakami;H. Ishida
作者研制了一种带有空心锥形探针的非接触模式扫描近场拉曼显微镜（NC-SNORM），利用紫外共振拉曼散射，测量了由二氧化硅（SiO2）薄膜和Si制成的超大规模集成标准件中的应力分布，并表征了Si纳米点结构。作者发现，被SiO2覆盖的区域处于拉应力下，未被SiO2覆盖的区域处于压应力下。压应力集中在覆盖区和非覆盖区之间的界面上，约100 nm宽。他们测量了Si纳米点结构的近场拉曼光谱，发现拉曼强度大约每100 nm周期性变化。
The authors developed a noncontact mode scanning near-field Raman microscope (NC-SNORM) with a hollow pyramidal probe, using ultraviolet resonant Raman scattering, measured the stress distribution in very-large-scale integration standards made of silicon dioxide (SiO2) film and Si, and characterized Si nanodot structures. The authors found that the areas covered by SiO2 are under tensile stress and the areas not covered by SiO2 are under compressive stress. Compressive stress concentrates on the interface, about 100nm wide, between the covered and noncovered areas. They measured near-field Raman spectra of the Si nanodot structures and found that the Raman intensities change periodically approximately every 100nm.