Cu-doped CdS and its application in CdTe thin film solar cell
Cu-doped CdS and its application in CdTe thin film solar cell
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Cu掺杂CdS及其在CdTe薄膜太阳能电池中的应用
DOI：
10.1063/1.4939817
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发表时间：
2016
期刊：
影响因子：
1.6
通讯作者：
Wang Deliang
中科院分区：
文献类型：
--
作者：
Deng Yi;Yang Jun;Yang Ruilong;Shen Kai;Wang Dezhao;Wang Deliang
铜被广泛用于碲镉薄膜太阳能电池的背接触形成。然而，Cu很容易从背接触扩散到CdTe吸收层中，甚至扩散到电池结界面CdS/CdTe。这一现象被认为是影响CdTesolar电池稳定性的主要因素。在本研究中，Cu被有意地掺杂到CdS薄膜中，以研究其对CdS材料的微结构、光学和电学性质的影响。Cu掺杂后，Cd −和表面态相关的光致发光发射显著降低/淬灭。Cu原子的存在阻碍了CdS薄膜在空气和CdCl 2退火过程中纳米晶粒的再结晶/聚结。用Cu掺杂的CdS窗口层制备的CdTe薄膜太阳电池的填充因子明显降低，这是由于p-n结附近空间电荷复合增加和结结晶质量变差引起的。温度依赖的电流-电压曲线测量表明，CdS窗口层中掺杂的Cu在室温和高温下都不稳定。
Cu is widely used in the back contact formation of CdTethin filmsolar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the celljunction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTesolar cell stability. In this study Cu was intentionally doped in CdSthin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cudoping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdSfilm during the air and the CdCl2 annealing. CdTethin filmsolar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the dopedCu in the CdS window layer was not stable at both room and higher temperatures.