Copper phthalocyanine buffer layer to enhance the charge injection in organic thin-film transistors
Copper phthalocyanine buffer layer to enhance the charge injection in organic thin-film transistors
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DOI：
10.1063/1.2535741
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发表时间：
2007-02-12
影响因子：
4
通讯作者：
Lin, Yung-Sheng
中科院分区：
文献类型：
--
作者：
Chen, Fang-Chung;Kung, Li-Jen;Lin, Yung-Sheng
酞菁铜（CuPC）已被用作源极和漏极的缓冲层以改善有机薄膜晶体管的性能。改性后流动性提高了近一倍。通过掺入CuPC，从线转移法推导出的接触电阻降低。在添加CuPC之后在仅空穴二极管中观察到的更高的空穴电流进一步证实了空穴注入效率的改善。结果表明，器件性能的改善主要是由于Au/CuPC界面处的费米能级钉扎导致了接触电阻的降低。(c)2007年，美国物理学会。
Copper phthalocyanine (CuPC) has been used as the buffer layer for source and drain electrodes to improve the performance of organic thin-film transistors. The mobility was improved by almost onefold after the modification. By incorporating with CuPC, the contact resistance was reduced, deduced from the line-transfer method. The higher hole current observed in the hole-only diode after adding CuPC further confirms the improvement of hole-injection efficiency. It is concluded that the device improvement is attributed to the reduction of contact resistance, which resulted from the Fermi level pinning at the induced gap states at the Au/CuPC interface. (c) 2007 American Institute of Physics.