Dynamic interaction between grain boundary and stacking fault tetrahedron
Dynamic interaction between grain boundary and stacking fault tetrahedron
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DOI：
10.1016/j.scriptamat.2017.09.027
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发表时间：
2018-02
影响因子：
6
通讯作者：
Liang Zhang;Cheng Lu;K. Tieu;Y. Shibuta
中科院分区：
文献类型：
--
作者：
Liang Zhang;Cheng Lu;K. Tieu;Y. Shibuta
利用分子动力学模拟研究了双晶铜中晶界与层错四面体之间的动力学相互作用。晶界在剪切应变作用下可以发生迁移，并可以作为一个汇来消除SFT。晶界的吸收效率对晶界的结构特征十分敏感。大角度晶界在极低的温度下也表现出很强的消除超快速傅里叶变换的能力，而温度的升高有利于小角度晶界处超快速傅里叶变换的湮灭。本研究揭示了一种新的可能的辐射材料的GB介导的损伤愈合机制。
We utilize molecular dynamics simulations to investigate the dynamic interaction between the grain boundary (GB) and the stacking fault tetrahedron (SFT) in bicrystal copper. The grain boundary can migrate itself under the shear strain and can serve as a sink to remove SFT. The sink efficiency of grain boundaries is sensitive to their structural characteristics. The high-angle GBs can show a great ability to remove SFT even at an extreme low temperature, while the increase of temperature can facilitate the annihilation of SFT at the low-angle GBs. This study reveals a new possible GB-mediated damage healing mechanism of irradiated materials.