57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs
57% wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs
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DOI：
10.1049/el:19970193
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发表时间：
1997-02-13
影响因子：
1.1
通讯作者：
Ebeling, KJ
中科院分区：
文献类型：
--
作者：
Jager, R;Grabherr, M;Ebeling, KJ
具有降低的有效指导指导的垂直腔腔发射激光器显示出创纪录的性能。基于GAA的850 nm发射波长VCSEL是使用固体源MBE和碳P型掺杂制造的。根据设备的设计，最大的室温转换效率为57％，工作范围从-80度C到+185度C，阈值电流从-40到+80摄氏度低于500 mu a。
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from -80 degrees C up to +185 degrees C, and threshold currents below 500 mu A from -40 to +80 degrees C have been obtained.