Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
复制标题
DOI：
10.1109/ted.2003.816920
复制
发表时间：
2003-10-01
影响因子：
3.1
通讯作者：
Kwong, DL
中科院分区：
文献类型：
--
作者：
Joo, MS;Cho, BJ;Kwong, DL
我们证明，使用单一混合液液体源HfAl（MMP）（2）（OiPr）（5），可以成功地沉积高质量金属有机化学气相沉积（MOCVD）HfAlxOy（以下称为HfAlO）介电膜，其中HfAlO中的HfO 2和Al 2 O3之间具有宽范围的组成可控性。通过控制沉积工艺参数实现HfAlO中HfO 2的45 - 90%的组成比。还研究了HfO 2和Al 2 O3组成比对薄膜电学性能的影响。具有90%HfO2（10%Al2O3）的HfAlO膜具有最小的K值牺牲（约19），显示出在随后的热处理期间热稳定性的极大改善和界面层生长的显著减少，导致漏电流与纯HfO 2膜相比减少约2个数量级。HfAlO薄膜在高温退火工艺下也表现出与TaN金属栅电极良好的相容性。
We demonstrate that a high quality metal organic chemical vapor deposition (MOCVD) HfAlxOy (hereafter HfAlO) dielectric film can successfully be deposited with a wide range of composition controllability between HfO2 and Al2O3 in HfAlO using a single cocktail liquid source HfAl(MMP)(2) (OiPr)(5). A composition ratio between 45 to 90% of HfO2 in HfAlO is achieved by controlling deposition process parameters. The effect of the composition ratio between HfO2 and Al2O3 on the electrical properties of the film is also investigated. The HfAlO film with 90% HfO2 (10% Al2O3), which has minimum sacrifice of K value (around 19), shows a great improvement in thermal stability and significant reduction of interfacial layer growth during subsequent thermal processes, leading to the reduction in leakage current by around 2 orders of magnitude compared to pure HfO2 film. The HfAlO film also shows good compatibility with TaN metal gate electrode under high temperature annealing process.