High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition
High growth rate of vertically aligned carbon nanotubes using a plasma shield in microwave plasma-enhanced chemical vapor deposition
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DOI：
10.1016/j.carbon.2004.05.020
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发表时间：
2004
期刊：
影响因子：
10.9
通讯作者：
H. Kinoshita;Ippei Kume;H. Sakai;M. Tagawa;N. Ohmae
中科院分区：
文献类型：
--
作者：
H. Kinoshita;Ippei Kume;H. Sakai;M. Tagawa;N. Ohmae
采用微波等离子体增强化学气相沉积法合成了垂直排列的碳纳米管。高的生长速率是通过避免直接等离子体照射在基板上，其中发生的碳纳米管的生长，使用等离子体屏蔽。利用透射电子显微镜和扫描电子显微镜研究了无等离子体屏蔽和有等离子体屏蔽条件下碳纳米管的合成。结果表明，有屏蔽层的碳纳米管的合成过程分为两个生长阶段，快速生长阶段的生长速率为280 nm/s。
The vertically aligned carbon nanotubes were synthesized using microwave plasma-enhanced chemical vapor deposition. The high growth rate was achieved by avoiding the direct plasma irradiation on a substrate, in which the growth of carbon nanotubes occurs, using a plasma shield. Transmission electron microscopy and scanning electron microscopy were used to investigate the synthesis of carbon nanotubes without and with the plasma shield. It was found that the synthesis process of the carbon nanotubes with the shield possessed two growth stages, and the growth rate in the fast growth stage was 280 nm/s.