A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors
A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors
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短沟道晶体管磁阻迁移率的综合研究：在应变和非应变绝缘体上硅场效应晶体管中的应用
DOI：
10.1063/1.3097764
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发表时间：
2009
影响因子：
3.2
通讯作者：
D. Maude
中科院分区：
文献类型：
--
作者：
M. Cassé;F. Rochette;L. Thevenod;N. Bhouri;F. Andrieu;G. Reimbold;F. Boulanger;M. Mouis;G. Ghibaudo;D. Maude
利用磁电阻（MR）测量方法，在300 ~ 20 K的宽温度范围内，测量了沟道长度小于40 nm的应变和非应变薄膜全耗尽绝缘体上硅金属氧化物半导体场效应晶体管（MOSFET）的电子迁移率。特别是库仑散射（CS）对MR迁移率的签名进行了仔细研究和实验澄清。我们证明，MR迁移率校正非平稳效应可以提取。迁移率数据，从而校正串联电阻和弹道效应表明，额外的散射确实发生在深100纳米规模的MOSFET。在整个栅极电压范围内，这种迁移率退化对于应变和非应变短沟道器件都是有效的。温度和反转载流子密度的依赖关系，以及迁移率的应变效应的分析揭示了一个强大的附加CS在短沟道器件。尽管这种主导机制，流动性增益高...
Magnetoresistance (MR) measurements is used to extract the electron mobility on strained and unstrained thin film fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transitors (MOSFETs) with channel length down to 40nm, and in a wide temperature range from 300 down to 20K. In particular the signature of Coulomb scattering (CS) on MR mobility is carefully studied and experimentally clarified. We demonstrate that MR mobility corrected for nonstationary effects can be extracted. The mobility data thus corrected for series resistance and ballistic effects show that an additional scattering really occurs in deep-100-nm scaled MOSFETs. This mobility degradation is effective for both strained and unstrained short channel devices, over the whole gate voltage range. The temperature and inversion carrier density dependences, as well as the analysis of the strain effect on mobility reveal a strong additional CS in short channel devices. Despite this dominant mechanism, a mobility gain as high...
影响因子：
3.2
作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
通讯作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons