Mobility of electrons in the surface state of liquid helium
Mobility of electrons in the surface state of liquid helium
复制标题
液氦表面态电子的迁移率
DOI：
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发表时间：
1980
期刊：
影响因子：
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通讯作者：
Y. Iye
中科院分区：
文献类型：
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作者：
Y. Iye
本文研究了液氦表面电子片对平行于表面的交流驱动场的响应。一个Corbino型电极排列被用来研究垂直磁场的影响。表面电子迁移率推导出从所观察到的温度和磁场的依赖性的交流响应，通过一个简化的等效电路分析。由此获得的迁移率数据显示了低温下的波纹限制行为，并且与Grimes和亚当斯的先前实验结果以及Saitoh的理论计算合理地一致。在3 He表面上进行的类似测量表明，迁移率是由气体原子散射到本研究的最低温度（~ 0.5 K）决定的。
The response of a sheet of electrons on the surface of liquid helium to an ac driving field parallel to the surface is investigated. A Corbino-type electrode arrangement is used to study the influence of a vertical magnetic field. The surface electron mobility is deduced from the observed temperature and magnetic field dependences of the ac response, by means of a simplified equivalent circuit analysis. The mobility data thus obtained show the ripplon-limited behavior at low temperature and are in reasonable agreement with the previous experimental result of Grimes and Adams and with the theoretical calculation of Saitoh. A similar measurement carried out on the surface of 3He has revealed that the mobility is determined by the gas atom scattering down to the lowest temperature (~ 0.5 K) of the present study.