Carbon Nanotube CMOS Analog Circuitry
Carbon Nanotube CMOS Analog Circuitry
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DOI：
10.1109/tnano.2019.2902739
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发表时间：
2019-03
影响因子：
2.4
通讯作者：
R. Ho;C. Lau;G. Hills;M. Shulaker
中科院分区：
文献类型：
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作者：
R. Ho;C. Lau;G. Hills;M. Shulaker
与当今的硅基FET相比，碳纳米管(CNT)场效应管(CNFET)具有显著的能效优势。然而，尽管有这样的前景，互补的(CMOS)CNFET模拟电路从未被实验证明。在这里，我们展示了首次报道的全CNFET模拟电路的演示。为了进行表征，我们制作了模拟积木电路：两级运算放大器的多个实例。这些CNFET CMOS运算放大器实现了增益>；700(输出电压相对于差分输入电压的最大导数)，在小于500 mV的定标电源电压下工作，实现了高线性度(即使在这些定标电压下工作)，并且随着时间的推移具有很强的稳定性(12小时内10 000次循环测量的最小漂移)。此外，我们还展示了一个前端模拟子系统，它将基于CNFET的呼吸传感器与模拟传感器接口电路(跨阻放大器和电压跟随器，将化学阻性CNFET传感器的电阻变化转换为缓冲输出电压)集成在一起。这些实验演示是关于CNFET CMOS模拟功能的第一份报告，该功能对于未来的CNT CMOS技术至关重要。
Carbon nanotube (CNT) field-effect transistors (CNFETs) promise significant energy efficiency benefits versus today's silicon-based FETs. Yet despite this promise, complementary (CMOS) CNFET analog circuitry has never been experimentally demonstrated. Here we show the first reported demonstration of full CNFET CMOS analog circuits. For characterization, we fabricate analog building block circuits: multiple instances of two-stage op-amps. These CNFET CMOS op-amps achieve gain >700 (maximum derivative of output voltage with respect to differential input voltage), operate at a scaled sub-500 mV supply voltage, achieve high linearity (even when operating at these scaled voltages), and are robust over time (minimal drift over >10 000 cycled measurements over 12 h). Additionally, we demonstrate a front-end analog subsystem that integrates a CNFET-based breath sensor with an analog sensor interface circuit (transimpedance amplifier followed by a voltage follower to convert resistance change of the chemoresistive CNFET sensor into a buffered output voltage). These experimental demonstrations are the first reports of the CNFET CMOS analog functionality that is essential for a future CNT CMOS technology.