Controlled low barrier height n+‐InGaAs/n‐GaAs pseudomorphic heterojunction Schottky diodes
Controlled low barrier height n+‐InGaAs/n‐GaAs pseudomorphic heterojunction Schottky diodes
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受控低势垒高度 n+-InGaAs/n-GaAs 赝晶异质结肖特基二极管
DOI：
10.1063/1.95747
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
P. Kirchner
中科院分区：
文献类型：
--
作者：
A. Kleinsasser;J. Woodall;G. Pettit;T. Jackson;J. Y. Tang;P. Kirchner
异质结肖特基势垒二极管，其中n+-InGaAs的赝晶层起到金属接触n-GaAs的作用，通过分子束外延生长。结具有低的势垒高度（30-150毫电子伏），这可以通过n+层的组成和掺杂来控制。器件的I-V测量证实，器件在4-200 K的温度范围内表现为肖特基二极管，符合隧穿和热辅助隧穿理论。随着In浓度的降低，电导呈指数增加，表明势垒高度降低，这至少与基于早期实验的势垒模拟定性一致，早期实验表明带隙不连续主要出现在导带中。
Heterojunction Schottky barrier diodes, in which a pseudomorphic layer of n+‐InGaAs played the role of a metal contacting n‐GaAs, were grown by molecular beam epitaxy. The junctions had low barrier heights (30–150 meV) which could be controlled by composition and doping of the n+ layer. I‐V measurements of the devices confirmed that the devices behaved as Schottky diodes, in accordance with the theory of tunneling and thermally assisted tunneling in the temperature range 4–200 K. An exponential increase in conductance with decreasing In concentration indicates a decrease in barrier height which is at least qualitatively consistent with simulations of the barriers based on earlier experiments, which showed that the band‐gap discontinuity appears predominately in the conduction band.