Origin and Control of the Dominant Impurities in High-Purity Germanium
Origin and Control of the Dominant Impurities in High-Purity Germanium
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高纯锗中主要杂质的来源及控制
DOI：
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发表时间：
1976
影响因子：
1.8
通讯作者：
F. Goulding
中科院分区：
文献类型：
--
作者：
E. Haller;W. Hansen;G. Hubbard;F. Goulding
已经开发出能够将锗持续纯化到 1010 个原子/cm3 范围的技术。主要杂质是受体硼和铝以及供体磷。硼和铝的非偏析化合物的形成使得这些元素难以通过常规区域精炼去除，而磷和所有其他电活性杂质通常会偏析，因此在区域精炼过程中被去除。我们的直拉拉晶机中引入的唯一重要杂质是磷，其来源可追溯到石英坩埚。为了可靠地将杂质浓度降低到可接受的水平，有必要开发确定最终单晶和多晶区精炼锭中杂质类型和浓度的技术，并将这些结果与各种舟皿和坩埚材料的使用联系起来。光热电离光谱和电测量已用于识别和测量杂质。
Techniques have been developed to consistently purify germanium to the 1010 atoms/cm3 range. The major impurities are the acceptors boron and aluminum and the donor phosphorous. Formation of nonsegregating compounds of boron and aluminum make these elements difficult to remove by conventional zone refining whereas phosphorous and all other electrically-active impurities segregate normally and are therefore removed in the zone refining process. The only significant impurity introduced in our Czochralski crystal puller is phosphorous whose source has been traced to the quartz crucible. To reliably reduce impurity concentrations to acceptable levels it has been necessary to develop techniques for determining the types and concentrations of impurities in both the final single crystals and in the polycrystalline zone-refined ingots and to relate these results to the use of various boat and crucible materials. Photothermal Ionization Spectroscopy and electrical measurements have been used to identify and measure the impurities.