SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
复制标题
DOI：
10.1103/physrev.71.717
复制
发表时间：
1947-01-01
期刊：
影响因子：
--
通讯作者：
BARDEEN, J
中科院分区：
文献类型：
--
作者：
BARDEEN, J
具有分布在填充带和导带之间的”禁戒”范围中的能量的局域态（Tamm能级）可以存在于半导体的表面处。表面原子上没有净电荷的条件可能对应于这些状态的部分填充。如果表面能级的密度足够高，在半导体的自由表面将有一个明显的双层，由表面态电子的净电荷和相反符号的空间电荷形成，类似于整流结处的空间电荷，延伸到半导体中。这种双层倾向于使功函数与内部费米能级的高度无关（这反过来又取决于杂质含量）。如果与金属接触，则金属和半导体之间的功函数差由表面态电荷补偿，而不是通常假设的空间电荷，因此空间电荷层与金属无关。因此整流特性与金属无关。这些想法被用来解释结果迈耶霍夫和其他人之间的关系接触电位差和整流。
Localized states (Tamm levels), having energies distributed in the" forbidden" range between the filled band and the conduction band, may exist at the surface of a semi-conductor. A condition of no net charge on the surface atoms may correspond to a partial filling of these states. If the density of surface levels is sufficiently high, there will be an appreciable double layer at the free surface of a semi-conductor formed from a net charge from electrons in surface states and a space charge of opposite sign, similar to that at a rectifying junction, extending into the semi-conductor. This double layer tends to make the work function independent of the height of the Fermi level in the interior (which in turn depends on impurity content). If contact is made with a metal, the difference in work function between metal and semi-conductor is compensated by surface states charge, rather than by a space charge as is ordinarily assumed, so that the space charge layer is independent of the metal. Rectification characteristics are then independent of the metal. These ideas are used to explain results of Meyerhof and others on the relation between contact potential differences and rectification.