Initial Stages of Epitaxial Growth of GaP on Si with AsH3 Preflow
Initial Stages of Epitaxial Growth of GaP on Si with AsH3 Preflow
复制标题
AsH3 预流在 Si 上外延生长 GaP 的初始阶段
DOI：
10.1143/jjap.29.l229
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
Y. Ohmachi
中科院分区：
文献类型：
--
作者：
Y. Kohama;Y. Kadota;Y. Ohmachi
以前的文章报道了在Si衬底上生长GaP外延层时，在生长前通过AsH_3预流形成As稳定的表面，防止了差距/Si界面处许多缺陷的产生，从而显著提高了GaP外延层的结晶质量。这封信描述了AsH 3预流对GaP外延生长初始阶段的影响。使用X射线光电子能谱法观察到的相对容易，其中作为或P原子被吸收到Si表面上。虽然在GaP生长之前的预流导致As或P原子吸附到Si表面上，但是As原子比P原子更容易被吸附。用高分辨扫描电子显微镜和透射电子显微镜研究了在Si衬底上有和没有AsH 3预流的GaP外延生长的初始阶段。这证实了AsH 3预流抑制了岛状生长，使GaP外延层二维生长，并且还降低了GaP-Si界面能。
A previous paper reported that when GaP epilayers are grown on Si substrates, an As-stabilized surface made by AsH3 preflow before growth prevents many defects from generating at the GaP/Si interface, and that consequently, the crystalline quality of GaP epilayers is markedly improved. This letter describes the AsH3 preflow effect on the initial stages of GaP epitaxial growth. The relative ease with which As or P atoms are absorbed onto Si surfaces is observed using X-ray photoelectron spectroscopy. Although preflow before GaP growth causes As or P atoms to absorb onto Si surfaces, As atoms are absorbed more easily than P atoms. The initial stages of GaP epitaxial growth on Si substrates with and without AsH3 preflow are investigated using high-resolution scanning electron microscopy and transmission electron microscopy. This confirms that AsH3 preflow suppresses island growth, allowing GaP epilayers to grow two-dimensionally, and also reduces the GaP-Si interfacial energy.