Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers
Temperature and pressure dependence of the recombination processes in 1.5μm InAs∕InP (311)B quantum dot lasers
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DOI：
10.1063/1.2790777
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发表时间：
2007-09
影响因子：
4
通讯作者：
N. Massé;E. Homeyer;I. Marko;A. Adams;S. Sweeney;O. Dehaese;R. Piron;F. Grillot;S. Loualiche
中科院分区：
文献类型：
--
作者：
N. Massé;E. Homeyer;I. Marko;A. Adams;S. Sweeney;O. Dehaese;R. Piron;F. Grillot;S. Loualiche
测量了1.5μm InAs/InP(311)B量子点激光器的阈值电流及其辐射分量随温度的变化关系。尽管辐射电流对温度几乎不敏感，但阈值电流随着温度的升高而急剧增加，导致特征温度T0≈55K约为290K。对润湿层自发辐射的直接观察表明，在这些器件中有一些从点到润湿层的泄漏。然而，阈值电流随压力的降低也被测量到，这表明俄歇复合对这些器件的非辐射电流和温度敏感性起主导作用。
The threshold current and its radiative component in 1.5μm InAs∕InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T0≈55K around 290K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices.