Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
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DOI：
10.1063/1.3081019
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发表时间：
2009-02
影响因子：
4
通讯作者：
Maojun Wang;Li Yuan;C. Cheng;C. Beling;K. J. Chen
中科院分区：
文献类型：
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作者：
Maojun Wang;Li Yuan;C. Cheng;C. Beling;K. J. Chen
利用正电子湮没光谱（PAS）研究了氟注入无意掺杂GaN层的缺陷形成和退火行为。以1×1015 cm−2氟注入180 keV后，PAS检测到的主要空位型缺陷为单Ga空位（VGa）。在600°C的N2环境下，植入后的VGa在600°C下退火后会聚集形成空位团簇。氟离子在热退火后倾向于快速形成f空位配合物，这与所提出的预测氟在GaN中的行为的扩散模型一致。
Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1×1015 cm−2. Implantation-induced VGa tend to aggregate and form vacancy clusters after postimplantation annealing in N2 ambient at 600 °C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN.