Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates
Vertical solar-blind deep-ultraviolet schottky photodetectors based on β-Ga2O3 substrates
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DOI：
10.1143/apex.1.011202
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发表时间：
2008-01-01
影响因子：
2.3
通讯作者：
Fujita, Shizuo
中科院分区：
文献类型：
--
作者：
Oshima, Takayoshi;Okuno, Takeya;Fujita, Shizuo
采用简单的热退火和真空蒸发工艺制备了基于（100）取向β - ga2o3衬底的垂直型肖特基光电探测器。光电探测器在+/- 3V下的整流比大于10(6)，在反向偏置下具有深紫外光检测能力。光谱响应在200 ~ 260 nm波长处具有2.6 ~ 8.7 a /W的高光敏度。这些值比假设内部量子效率为单位的值高35-150倍。这一事实是由于载流子倍增发生在高阻表面区域，该区域受到约1.0 MV/cm的高内部电场，反向偏置为10 V。(c) 2008日本应用物理学会。
A vertical-type Schottky photodetector based on a (100)-oriented beta-Ga2O3 substrate has been fabricated with simple processes of thermal annealing and vacuum evaporation. The photodetector exhibited a rectification ratio higher than 10(6) at +/- 3V, and showed deep-ultraviolet-light detection at reverse bias. The spectral response showed solar-blind sensitivity with high photoresponsivities of 2.6-8.7A/W at wavelengths of 200-260 nm. These values were 35-150 times higher than those derived assuming the internal quantum efficiency to be unity. This fact is attributed to the carrier multiplication occurring in the highly resistive surface region that is subject to a high internal electric field of about 1.0 MV/cm at the reverse bias of 10 V. (c) 2008 The Japan Society of Applied Physics.