Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull Distribution
Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull Distribution
复制标题
通过威布尔分布描述的击穿场进行局部介电击穿的点接触
DOI：
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发表时间：
2015
影响因子：
3.1
通讯作者：
S. Bremner
中科院分区：
文献类型：
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作者：
N. Western;I. Perez;S. Wenham;S. Bremner
我们报告的点接触局部介质击穿（PLDB）技术应用于形成欧姆接触在室温下，硅测试结构与局部掺杂的表面区域和四个通常用于表面钝化的硅太阳能电池。我们的研究结果表明，这些样品的击穿电场的统计分布可以拟合与威布尔分布，表明用于介电故障的渗流模型可以用来描述这个过程。Poole-Frenkel场辅助跳跃传导被确定为所有钝化层的主导传导机制，然而，没有观察到泄漏电流和击穿场之间的相关性。尽管缺乏击穿场的预测模型，但PLDB技术可以应用于具有许多不同介电层的结构，从而在不需要高温处理步骤的情况下提供低电阻欧姆接触。
We report on the point-contacting by localized dielectric breakdown (PLDB) technique applied to form ohmic contacts at room temperature, to silicon test structures with locally doped surface regions and four dielectrics commonly used for surface passivation in silicon solar cells. Our results show that the statistical distribution of the electric field at breakdown for these samples can be fitted with a Weibull distribution, indicating that a percolation model used for dielectric failure can be used to describe this process. Poole-Frenkel field-assisted hopping conduction was identified as being the dominant conduction mechanism for all of the passivating layers, however, no correlation between leakage current and breakdown field was observed. Despite the lack of a predictive model for the breakdown field, the PLDB technique can be applied to structures with a number of different dielectric layers, delivering a low-resistance ohmic contact without the need for high-temperature processing steps.