Recent Developments in Mercury Cadmium Telluride IR Detector Technology
Recent Developments in Mercury Cadmium Telluride IR Detector Technology
复制标题
碲化汞红外探测器技术的最新进展
DOI：
10.1149/06914.0061ecst
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发表时间：
2015
影响因子：
3.1
通讯作者：
L. Faraone
中科院分区：
文献类型：
--
作者：
J. Antoszewski;N. Akhavan;G. Umana;R. Gu;W. Lei;L. Faraone
尽管人们多次尝试寻找更好的红外探测器材料，HgCdTe 仍然在高性能端市场占据主导地位。目前，该领域的研究主要针对高像素密度、高产量、减少冷却和高光谱操作。随着最近报道的 4” CdZnTe 晶格匹配衬底的开发，用于 HgCdTe 外延生长的高质量、大面积衬底的可用性这一长期存在的问题似乎正在得到缓解。由于大的晶格失配导致高缺陷密度，在硅、GaAs 或最近研究的 GaSb 等替代衬底上生长的 HgCdTe 的质量仍然落后于 CdZnTe 上可实现的质量。最近缩小像素尺寸和间距的努力导致了衍射限制高清焦平面的开发最近提出并深入研究了 HgCdTe 材料系统中单极 n 型/势垒/n 型探测器结构的实现，由于 HgCdTe 优异的传输和光学特性，预计这些结构在优化后将在显着更高的工作温度下实现背景有限的性能。
In spite of many attempts to find better material for infrared detectors, HgCdTe still dominates the high performance end of the market. At present, the research in this field is directed towards high pixel density, high yield, reduced cooling and hyperspectral operation. Long lasting issue of availability of high quality, large area substrates for epitaxial growth of HgCdTe seems to be easing recently with development of 4” CdZnTe lattice matching substrates reported recently. The quality of HgCdTe grown on alternative substrates like silicon, GaAs or recently investigated GaSb still falls behind that achievable on CdZnTe due to large lattice mismatch leading to high defect density. Recent effort to scale down the pixel size and pitch resulted in development of diffraction limited high definition focal plane arrays. Implementation of unipolar n-type/barrier/n-type detector structure in HgCdTe material system has been recently proposed and studied intensively. Due to superior transport and optical properties of HgCdTe it is expected that, when optimized, these structures will allow for background limited performance at significantly higher operating temperatures.