Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants.
Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants.
复制标题
InN 表面电子积累的巨大减少：通过 Mg 掺杂剂补偿表面施主。
作者：
W. Linhart;J. Chai;R. Morris;M. Dowsett;C. McConville;S. M. Durbin;T. Veal
Extreme electron accumulation with sheet density greater than 10(13) cm(-2) is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 10(8) cm(-2). Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices.
