Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
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DOI：
10.1063/1.2740580
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发表时间：
2007-05-14
影响因子：
4
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Danno, Katsunori;Nakamura, Daisuke;Kimoto, Tsunenobu
用微分微波光电导衰减测量方法研究了4 H-SiC外延层的载流子寿命。当Z（1/2）浓度高于10（13）cm（-3）时，Z（1/2）中心作为复合中心。在这种情况下，载流子寿命显示出对注入水平（照射光子的数量）的正依赖性。另一方面，当Z（1/2）浓度低于10（13）cm（-3）时，诸如表面复合的其它复合过程限制寿命。在这种情况下，载流子寿命已经通过增加注入水平而降低。通过低能电子辐照控制Z（1/2）浓度，实现了寿命控制。(C)2007年，美国物理学会。
Carrier lifetimes in 4H-SiC epilayers are investigated by differential microwave photoconductivity decay measurements. When the Z(1/2) concentration is higher than 10(13) cm(-3), the Z(1/2) center works as a recombination center. In this case, carrier lifetimes show positive dependence on the injection level (number of irradiated photons). On the other hand, other recombination processes such as surface recombination limit the lifetime when the Z(1/2) concentration is lower than 10(13) cm(-3). In this case, carrier lifetimes have decreased by increasing the injection level. By controlling the Z(1/2) concentration by low-energy electron irradiation, the lifetime control has been achieved. (C) 2007 American Institute of Physics.