Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
复制标题
通过抑制碳杂质的掺入降低低温生长p-Al0.09Ga0.91N的电阻率
DOI：
10.1063/1.5046875
复制
发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
Du G. T.
中科院分区：
文献类型：
--
作者：
Liang F.;Yang Jing;Zhao D. G.;Jiang D. S.;Liu Z. S.;Zhu J. J.;Chen P.;Liu S. T.;Xing Y.;Zhang L. Q.;Wang W. J.;Li Mo;Zhang Y. T.;Du G. T.
降低低温生长的p-Al0.09Ga0.91N层的电阻率是提高GaN基激光二极管性能的关键。本研究对低温生长的p-Al0.09Ga0.91N层的生长条件进行了监测，并系统地研究了C杂质的作用。根据电阻率对C浓度的依赖关系和光致发光分析，发现C杂质在p-Al0.09Ga0.91N层中起施主作用，降低C浓度可以降低其对镁受主的补偿作用。最终，低温生长的p-Al0.09Ga0.91N的电阻率达到4.2Ga0.91N，降低p-Al0.09Ga0.91N的电阻率是提高GaN基激光二极管性能的关键。本研究对低温生长的p-Al0.09Ga0.91N层的生长条件进行了监测，并系统地研究了C杂质的作用。根据电阻率对C浓度的依赖关系和光致发光分析，发现C杂质在p-Al0.09Ga0.91N层中起施主作用，降低C浓度可以降低其对镁受主的补偿作用。最终，低温生长的p-Al0.09Ga0.91N的电阻率达到了4.2Ga0.91N/Ω。
Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.