Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors
Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors
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SiGe高速晶体管和高压晶体管的同时集成
DOI：
10.1109/bipol.2006.311159
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
R. Lachner
中科院分区：
文献类型：
--
作者：
R. K. Vytla;T. Meister;K. Aufinger;D. Lukashevich;S. Boguth;H. Knapp;J. Bock;H. Schafer;R. Lachner
由于高速晶体管需要浅层集电极，因此将具有高调谐范围的高压晶体管和变容管集成到高频SiGe双极技术中是具有挑战性的。本文提出了一种高速SiGe双极技术，采用两个外延层的新概念，同时集成高速晶体管，高压晶体管和变容管。利用这一概念，具有209 GHz截止频率和3.3 ps栅极延迟的高速晶体管与提供5 V发射集电极击穿电压的高压晶体管相结合。此外，在这个概念中，已经开发和优化了一个变容管，以实现13 GHz的高调谐范围和77 GHz压控振荡器的低相位噪声
Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO