Thermal Stability of Transparent ITO/n-Ga 2 O 3 /n+-Ga 2 O 3 /ITO Rectifiers
Thermal Stability of Transparent ITO/n-Ga 2 O 3 /n+-Ga 2 O 3 /ITO Rectifiers
复制标题
透明ITO/n-Ga 2 O 3 /n-Ga 2 O 3 /ITO整流器的热稳定性
DOI：
10.1149/2162-8777/ac3ace
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发表时间：
2021
影响因子：
2.2
通讯作者：
Pearton, S. J.
中科院分区：
文献类型：
--
作者：
Xia, Xinyi;Xian, Minghan;Ren, Fan;Rasel, Md Abu;Haque, Aman;Pearton, S. J.
报道了n/n+ β- ga2o3外延层/衬底结构的热稳定性，其两侧溅射ITO在轻掺杂层和重掺杂衬底上作为整流触点。单独沉积在Si上的ITO的电阻率从沉积时的1.83× 10−3 Ω. cm下降到300℃退火后的3.6× 10−4 Ω. cm，在较高温度下仅略有下降（600℃退火后为2.8× 10−4 Ω. cm）。肖特基势垒高度也随退火而降低，从沉积样品的0.98 eV降低到500℃退火后的0.85 eV。当退火温度为400℃时，反向击穿电压的温度系数为- 0.46 VC−1，且温度越高，降解速度越快。透射电镜显示，在300℃以上，ITO和ga2o3界面发生了明显的反应，500℃退火后，接触层发生了严重退化。
The thermal stability of n/n+ β-Ga 2 O 3 epitaxial layer/substrate structures with sputtered ITO on both sides to act as rectifying contacts on the lightly doped layer and Ohmic on the heavily doped substrate is reported. The resistivity of the ITO deposited separately on Si decreased from 1.83× 10− 3 Ω. cm as-deposited to 3.6× 10− 4 Ω. cm after 300 C anneal, with only minor reductions at higher temperatures (2.8× 10− 4 Ω. cm after 600 C anneals). The Schottky barrier height also decreased with annealing, from 0.98 eV in the as-deposited samples to 0.85 eV after 500 C annealing. The reverse breakdown voltage exhibited a negative temperature coefficient of− 0.46 VC− 1 up to an annealing temperature of 400 C and degraded faster at higher temperatures. Transmission Electron Microscopy showed significant reaction at the ITO and Ga 2 O 3 interface above 300 C, with a very degraded contact stack after annealing at 500 C.