Positive-plasma-bias method for plasma-based ion implantation and deposition
Positive-plasma-bias method for plasma-based ion implantation and deposition
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用于等离子体离子注入和沉积的正等离子体偏压方法
DOI：
10.1016/j.surfcoat.2010.03.004
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
K. Yukimura
中科院分区：
文献类型：
--
作者：
T.Ikehata;R. Sasaki;T. Tanaka;K. Yukimura
正等离子体偏压（PPB）方法是等离子体基离子注入和沉积（PBII&D）的一种新方法。在PPB方法中，等离子体相对于处于地电位的目标被偏置为正。虽然它提供了诸如在PBII&D处理期间处理目标和原位过程监测等好处，但需要特别考虑以满足必要的PPB条件。在本文中，基本原理和应用的PPB方法，已进行了多年的作者的小组：首先，工作原理，几何，电位和电流分布的解释。然后，特殊功能，可能的优点和缺点进行了讨论。最后介绍了PPB方法在环境友好型等离子体清洗和绝缘体双等离子体离子化工艺中的应用。
The positive-plasma-bias (PPB) method has been explored as a new option for the plasma-based ion implantation and deposition (PBII&D). In the PPB method, plasma is biased positive with respect to a target which is at ground potential. While it offers benefits such as handling of target during PBII&D processing and in-situ process monitoring, special considerations are needed to meet the necessary PPB conditions. In the present paper, fundamentals and applications of the PPB method that has been performed for years by the author's group are presented: First the working principle, geometry, potential and current distributions are explained. Then special features, possible merits and demerits are discussed. Finally the environment-friendly plasma cleaning and the dual-plasma ion process for insulator processing are presented as applications of the PPB method.