Photoreflectance of semi-insulating InP: Resistivity effects on the exciton phase
Photoreflectance of semi-insulating InP: Resistivity effects on the exciton phase
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半绝缘 InP 的光反射：电阻率对激子相的影响
DOI：
10.1063/1.104748
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发表时间：
1991
影响因子：
4
通讯作者：
N. Bottka
中科院分区：
文献类型：
--
作者：
A. K. Berry;D. K. Gaskill;G. Stauf;N. Bottka
结果表明，光反射（PR），调制光谱的非接触形式，可以用来测量半绝缘InP：Fe衬底的电阻率。PR测量的基板，从不同的供应商和实验室，在82 K下进行，并具有由激子跃迁占主导地位的线形。发现线形的相位角是衬底的体电阻率的量度。线形相位角的行为由激子电离模型解释，其中样品表面附近的电场足以使激子电离。该电离电场的范围对应于附加地进入激子线形相的光程长度。具有较高折射率的样品具有较大程度的电离电场，从而增加激子线形状的相位角。
It is shown that photoreflectance (PR), a contactless form of modulation spectroscopy, can be used to measure the resistivity of semi‐insulating InP:Fe substrates. PR measurements of the substrates, obtained from various vendors and laboratories, were performed at 82 K and had line shapes dominated by excitonic transitions. The phase angle of the line shape was found to be a measure of the bulk resistivity of the substrate. The behavior of the line shape phase angle is explained by the exciton ionization model, where the electric field near the surface of the sample is sufficient to ionize excitons. The extent of this ionizing electric field corresponds to an optical path length which enters additively into the exciton line shape phase. Samples with higher resistivities have ionizing electric fields of larger extent, increasing the phase angle of the exciton line shape.