InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices
InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices
复制标题
使用集成多输入谐振隧道器件的基于 InP 的高性能单稳态-双稳态转换逻辑元件 (MOBILE)
DOI：
10.1109/55.485189
复制
发表时间：
1996
影响因子：
4.9
通讯作者：
M. Yamamoto
中科院分区：
文献类型：
--
作者：
Kevin J. Chen;Koichi Maezawa;M. Yamamoto
利用共振隧穿二极管和高电子迁移率晶体管的单片集成，在InP基材料系统中展示了具有多输入和多功能优点的MOBLE(单稳态-双稳态转换逻辑元件)。在这种基于InP的材料系统中，表现出了高性能手机所需要的高峰电流密度、高峰谷比和高跨导。一种宽度比为1：2：4的三输入门移动体可以进行加权和门限逻辑运算，在神经网络等新型计算体系结构中有着广泛的应用。
MOBILEs (monostable-bistable transition logic elements), which have the advantages of multiple-input and multiple-function, are demonstrated in InP-based material system using monolithic integration of resonant-tunneling diodes and high electron mobility transistors. The high peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILEs, are demonstrated in this InP-based material system. A fabricated MOBILE with three-input gates having 1:2:4 width ratio can perform weighted-sum threshold logic operation, and has a wide range of applications in new computing architectures, such as neural networks.