Broadband photoresponse of graphene photodetector from visible to long-wavelength infrared wavelengths
Broadband photoresponse of graphene photodetector from visible to long-wavelength infrared wavelengths
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DOI：
10.1117/1.oe.58.5.057106
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发表时间：
2019-05-01
影响因子：
1.3
通讯作者：
Matsumoto, Kazuhiko
中科院分区：
文献类型：
--
作者：
Ogawa, Shinpei;Shimatani, Masaaki;Matsumoto, Kazuhiko
基于石墨烯的晶体管作为简单的光电探测器被研究在广泛的波长范围内。利用具有SiO_2层的p掺杂硅(Si)衬底以及源极和漏极制备了石墨烯晶体管。用化学气相沉积法制备了单层石墨烯，并将其转移到衬底上，形成了石墨烯沟道区。在从可见光、近红外(NIR)和中长波IR(MWIR到LWIR)的宽带波长范围内测量了光响应。在可见光波段，Si衬底的光门效应增强了光响应。在长波红外区域，绝缘层的热效应增强占主导地位，这表明基于石墨烯的晶体管的光响应可以由周围的材料控制，取决于工作波长。这些结果有望为高性能石墨烯光电探测器的研究提供关键机制。(C)作者。由SPIE在知识共享署名4.0未移植许可下发布。分发或复制本作品的全部或部分内容需要提供原始出版物的全部归属，包括其DOI。
Graphene-based transistors were investigated as simple photodetectors for a broad range of wavelengths. Graphene transistors were prepared using p-doped silicon (Si) substrates with a SiO2 layer, and source and drain electrodes. Monolayer graphene was fabricated by chemical vapor deposition and transferred onto the substrates, and the graphene channel region was then formed. The photoresponse was measured in the broadband wavelength range from the visible, near-infrared (NIR), and mid- to long-wavelength IR (MWIR to LWIR) regions. The photoresponse was enhanced by the photogating induced by the Si substrate at visible wavelengths. Enhancement by the thermal effect of the insulator layer became dominant in the LWIR region, which indicates that the photoresponse of graphene-based transistors can be controlled by the surrounding materials, depending on the operation wavelength. These results are expected to contribute to provide the key mechanism of high-performance graphene-based photodetectors. (C) The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.