A 12b 500MS/s DAC with >70dB SFDR up to 120MHz in 0.18μm CMOS

A 12b 500MS/s DAC with >70dB SFDR up to 120MHz in 0.18μm CMOS
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DOI:
10.1109/isscc.2005.1493896
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发表时间:
2005-08
期刊:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.
影响因子:
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通讯作者:
K. Doris;J. Briaire;D. Leenaerts;M. Vertreg;A. V. Roermund
K. Doris;J. Briaire;D. Leenaerts;M. Vertreg;A. V. Roermund
中科院分区:
其他
文献类型:
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作者:
K. Doris;J. Briaire;D. Leenaerts;M. Vertreg;A. V. Roermund

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CMOS 电流控制 12b 500MS/s 216mW DAC 无需任何额外电路来消除转换过程中引入的误差,在奈奎斯特频段以上高达 120MHz 时具有 >70dB SFDR。这与需要额外电路的最先进性能相当,并且比任何没有额外电路的设计更好
A CMOS current steering 12b 500MS/s 216mW DAC without any additional circuitry to remove errors introduced during the conversion process has >70dB SFDR up to 120MHz above the Nyquist band. This is comparable to state-of-the-art performance requiring additional circuitry, and better than any design without additional circuitry