Reactive sputter deposition of tungsten nitride thin films
Reactive sputter deposition of tungsten nitride thin films
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DOI：
10.1116/1.1498278
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发表时间：
2002-09-01
期刊：
影响因子：
--
通讯作者：
Shah, SI
中科院分区：
文献类型：
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作者：
Baker, CC;Shah, SI
在氩气/氮气气氛下，用反应溅射法制备了氮化钨（WNx）薄膜。生长室内氮浓度为2% ~ 60%。研究了膜中氮浓度对膜生长和性能的影响。当氮浓度在2% ~ 5%范围内时，阴极电流和电压在膜生长过程中的变化表明阴极中毒。这种中毒伴随着薄膜生长速率的降低。然而，由于在靶材表面形成的WNx相具有较低的电阻率和相似的溅射成品率，因此阴极电流和沉积速率的降低都很小。x射线光电子能谱分析表明，该薄膜由类似于33 at组成。当室内氮气浓度大于10%时，采用%氮气。x射线衍射（XRD）分析证实薄膜以W2N为主，特征峰（111）位于2theta = 37.7°处。（111）峰位置的轻微变化是由于过量的氮掺入间隙位置，导致晶格畸变。沉积后退火去除多余的间隙氮，XRD峰向特征值移动。(C) 2002年美国真空学会。
Tungsten nitride (WNx) thin films were deposited by reactively sputtering a pure W target in an argon/nitrogen atmosphere. The nitrogen concentration in the growth chamber was varied from 2% to 60%. Film growth and properties were studied as a function of nitrogen concentration in the films. The cathode current and voltage variations during the film growth indicated cathode poisoning when the nitrogen concentration in the chamber was in the range of 2%-5%. This poisoning was accompanied by a reduced film growth rate. However, both the cathode current and deposition rate decrease were small due to the low resistivity and similar sputter yield of the WNx phase formed at the surface of the target and pure W. X-ray photoelectron spectroscopy analyses showed that the films were composed of similar to33 at.% nitrogen when the nitrogen concentration in the chamber was greater than 10%. X-ray diffraction (XRD) analysis confirmed that the films were predominantly W2N with the characteristic (111) peak at 2theta = 37.7degrees. Slight shifts in the (111) peak position were due to excess nitrogen incorporation in interstitial positions, which caused lattice distortions. Postdeposition annealing removed the excess interstitial nitrogen and the XRD peaks shifted closer to the characteristic value. (C) 2002 American Vacuum Society.