Taking Account of the Nonstationarity in Analyzing the Optically Stimulated Electron Emission of Irradiated Dielectrics
Taking Account of the Nonstationarity in Analyzing the Optically Stimulated Electron Emission of Irradiated Dielectrics
复制标题
考虑辐照电介质光受激电子发射分析中的非平稳性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
V. Kortov
中科院分区：
文献类型：
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作者：
A. Zatsepin;D. Biryukov;V. Kortov
分析了记录时间指数衰减所引起的光受激电子发射（OSEE）谱的畸变。它已被证明，考虑到在分析发射光谱的发射电流的非平稳允许获得等时的温度依赖性的选择OSEE带的强度。计算的OSEE的量子产率和激活势垒的缺陷的激发态的热电离的程序进行了说明。光电子动力学的分析允许估计浓度的活性OSEE中心与未知参数（光学跃迁振子强度，量子产率）。对于玻璃态SiO2中的抗磁性氧缺陷中心，计算了光电子发射动力学，并确定了光激发单重态的热电离势垒和OSEE的量子产率。
The distortions of the optically stimulated electron emission (OSEE) spectra resulting from the exponential decay in the recording time have been analyzed. It has been shown that taking account of the emission current nonstationary in analyzing the emission spectra permits obtaining isochronal temperature dependences of intensity for selective OSEE bands. The procedure for calculating the quantum yield of the OSEE and the activation barriers of thermal ionization of the excited states of defects is described. Analysis of the photoemission kinetics permits estimating the concentration of active OSEE centers with unknown parameters (optical transition oscillator strength, quantum yield). For diamagnetic oxygen-deficient centers in glassy SiO2, the photoemission kinetics has been calculated and the thermal ionization barrier of the photoexcited singlet state and the quantum yield of the OSEE have been determined.