Improvement of interfacial and dielectric properties of sputtered Ta2O5 thin films by substrate biasing and the underlying mechanism
Improvement of interfacial and dielectric properties of sputtered Ta2O5 thin films by substrate biasing and the underlying mechanism
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DOI：
10.1063/1.1922585
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发表时间：
2005-05
影响因子：
3.2
通讯作者：
A. Huang;P. Chu
中科院分区：
文献类型：
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作者：
A. Huang;P. Chu
使用五氧化二钽 (Ta2O5) 薄膜作为集成电路中的先进栅极电介质一直受到 Ta2O5/Si 界面热力学不稳定性的阻碍。我们已经展示了通过衬底偏置在较低衬底温度下在 n 型 Si (100) 上制造晶体 Ta2O5 薄膜。在此报告的工作中，详细研究了衬底偏压对 Ta2O5 薄膜的界面和介电特性的影响。我们的结果表明，通过对 Si 衬底施加合适的偏压，可以改善 Ta2O5 薄膜的介电性能。使用-200 V的衬底偏压，在800 kV/cm的电场下，薄膜的介电常数为34，漏电流密度为10−7A/cm2。描述了偏置对界面和介电特性的影响和机制。
The use of tantalum pentoxide (Ta2O5) thin films as advanced gate dielectrics in integrated circuits has been hampered by thermodynamic instability at the Ta2O5/Si interface. We have demonstrated the fabrication of crystalline Ta2O5 thin films on n-type Si (100) at lower substrate temperature by means of substrate biasing. In the work reported here, the influence of the substrate bias on the interfacial and dielectric characteristics of the Ta2O5 thin films is investigated in details. Our results show that by applying a suitable bias to the Si substrate, the dielectric properties of Ta2O5 thin films can be improved. Using a substrate bias of −200 V, the thin film has a permittivity of 34 and leakage current density of 10−7A∕cm2 at an electric field of 800 kV/cm. The effects and mechanism of the bias on the interfacial and dielectric characteristics are described.