Magnetoelectronic characteristics of a GMR transpinnor and a magnetic random access memory using a closed-flux NiFe/Cu/CoFe/Cu/NiFe pseudo spin-valve
Magnetoelectronic characteristics of a GMR transpinnor and a magnetic random access memory using a closed-flux NiFe/Cu/CoFe/Cu/NiFe pseudo spin-valve
复制标题
使用闭磁通 NiFe/Cu/CoFe/Cu/NiFe 伪自旋阀的 GMR 转针器和磁性随机存取存储器的磁电子特性
DOI：
10.1063/1.1447204
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
E. J. Torok
中科院分区：
文献类型：
--
作者：
S. Bae;J. Judy;P. Chen;W. Egelhoff;S. Zurn;L. Sheppard;E. J. Torok
研究了一种新型多功能固态器件GMR“TRANSPNOR”和磁随机存取存储器(MRAM)的磁电子学特性，采用闭磁通NiFe/Cu/CoFe/Cu/NiFe伪自旋阀(PSV)结构，在同一衬底上实现了电流驱动1的MRAM单元结构.PSV-MRAM单元和单输入或双输入“转旋器”的电磁器件特性是巨磁电阻比为3%-6%，方块电阻率为4-5Ω/-。利用带有NiFe(30 Nm)/Cu(90 Nm)字或输入线的图案化Si/Si3N4/PSV测量了PSV MRAM单元的开关特性。当由电流密度为2.7×106 A/cm~2的字线感应10.2Oe感应场时，写入场设置为±40Oe，获得1~3 mV的输出信号。利用在与MRAM单元相同的晶片上制作的PSV，测量了GMR“TRANSOR”的输出特性。与标准晶体管特性类似，TRANSPONOR表现出更强的可控性。
The magnetoelectronic device characteristics of a GMR “transpinnor,” a new multifunctional solid-state device, and a magnetic random access memory (MRAM) have been investigated using the structure of closed-flux NiFe/Cu/CoFe/Cu/NiFe pseudo spin-valve (PSV) for a new current driver-one MRAM cell architecture on the same substrate. The electrical and magnetic device characteristics of a PSV-MRAM cell and single or dual-input “transpinnors” are a GMR ratio of 3%–6% and a sheet resistivity of 4–5Ω/□. The switching characteristics of PSV MRAM cells were measured using patterned Si/Si3N4/PSV with a NiFe(30 nm)/Cu(90 nm) word or input line. The writing field was set at ±40 Oe and a 1–3 mV output signal was obtained when a 10.2 Oe sensing field was induced by a word line with a current density of 2.7×106 A/cm2. The output characteristics of the GMR “transpinnor” were measured using a PSV fabricated on the same wafer with the MRAM cell. Similar to standard transistor characteristics, the transpinnor exhibits a ver...