Synthesis and Characterization of Solution Processed Silver Indium Diselenide Thin Films
Synthesis and Characterization of Solution Processed Silver Indium Diselenide Thin Films
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DOI：
10.1109/pvsc43889.2021.9518774
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
David J. Rokke;Kyle G. Weideman;A. Murray;R. Agrawal
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文献类型：
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作者：
David J. Rokke;Kyle G. Weideman;A. Murray;R. Agrawal
银铟二硒化物 (AgInSe2) 是一种很有前景但研究不足的吸收材料。在这项工作中，我们提出了一种制造 AgIn(S,Se)2 薄膜并表征基本电子特性的溶液加工路线。我们展示了霍尔效应、开尔文探针力显微镜 (KPFM) 和光致发光 (PL) 结果，这些结果展示了有前景的特性，包括高载流子迁移率和良性晶界。我们建议将弱 n 型 AgInSe2 应用于 p-i-n 型太阳能电池，这与之前制造 p-n AgInSe2 器件的尝试相反。这将需要仔细选择合适的电子和空穴传输层。
Silver indium diselenide (AgInSe2) is a promising but under-investigated absorber material. In this work, we present a solution processing route to fabricate AgIn(S,Se)2 thin films and characterize basic electronic properties. We present Hall Effect, Kelvin Probe Force Microscopy (KPFM), and Photoluminescence (PL) results that demonstrate promising characteristics, including high carrier mobilities and benign grain boundaries. We propose that weakly n-type AgInSe2 should be applied in p-i-n type solar cells, contrary to prior attempts at making p-n AgInSe2 devices. This will necessitate a careful selection of suitable electron and hole transporting layers.