Near EF electronic structure of heavily boron-doped superconducting diamond
Near EF electronic structure of heavily boron-doped superconducting diamond
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重硼掺杂超导金刚石的近EF电子结构
DOI：
10.1016/j.jpcs.2008.06.006
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发表时间：
2008
影响因子：
4
通讯作者：
T. Oguchi
中科院分区：
文献类型：
--
作者：
H. Okazaki;T. Yokoya;J. Nakamura;N. Yamada;Tetsuya Nakamura;T. Muro;Y. Tamenori;T. Matsushita;Y. Takata;T. Tokushima;Shik Shin;Y. Takano;M. Nagao;T. Takenouchi;H. Kawarada;T. Oguchi
我们对重掺硼超导金刚石薄膜（Tc=7.2K）进行了软X射线角分辨光电子能谱（SXARPES）研究，以研究费米能级（EF）附近的电子结构。通过对布里渊区（BZ）中跨Γ点动量空间的测量和能量分辨率的提高，进一步证明了EF位于高色散类金刚石带，表明类金刚石价带顶的空穴对重掺硼超导金刚石的导电性能起着至关重要的作用（有效载流子浓度为1.6%）。在EF处的SXARPES强度也被映射到BZ上，以获得实验费米面片，并与计算进行比较。
We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EFis located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EFwere also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations.
影响因子：
3.7
作者：
T. Yokoya;E. Ikenaga;M. Kobata;H. Okazaki;K. Kobayashi;A. Takeuchi;A. Awaji;Y. Takano;M. Nagao;I. Sakaguchi;T. Takenouchi;H. Kawarada;T. Oguchi
通讯作者：
T. Yokoya;E. Ikenaga;M. Kobata;H. Okazaki;K. Kobayashi;A. Takeuchi;A. Awaji;Y. Takano;M. Nagao;I. Sakaguchi;T. Takenouchi;H. Kawarada;T. Oguchi